tsm2n70 700v n-channel power mosfet 1/10 version: b11 to - 220 to - 25 1 (ipak) to - 25 2 (dpak) product summary v ds (v) r ds(on) ( ) i d (a) 700 6.5 @ v gs =10v 1 general description the tsm2n70 n-channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superio r switching performance, and withstand high energy pu lse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, power factor correction, electro nic lamp ballast based on half bridge. features low r ds(on) 6.5 (max.) low gate charge typical @ 9.5nc (typ.) low crss typical @ 4.5pf (typ.) fast switching ordering information part no. package packing tsm2n70cz c0 to-220 50pcs / tube tsm2n70ch c5 to-251 70pcs / tube tsm2n70ch c5g to-251 70pcs / tube tsm2n70cp ro to-252 2.5kpcs / 13 reel tsm2n70cp rog to-252 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 700 v gate-source voltage v gs 30 v continuous drain current i d 2 a pulsed drain current * i dm 8 a repetitive avalanche current i ar 2 a single pulse avalanche energy (note 2) e as 110 mj maximum power dissipation @t c = 25 o c p tot 45 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.78 o c/w thermal resistance - junction to ambient r ? ja 100 o c/w notes: surface mounted on fr4 board t 10sec block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm2n70 700v n-channel power mosfet 2/10 version: b11 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 1ma bv dss 700 -- -- v drain-source on-state resistance v gs = 10v, i d = 1a r ds(on) -- 5.25 6.5 gate threshold voltage v ds = v gs , i d = 50ua v gs(th) 2 -- 4 v zero gate voltage drain current v ds = 700v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 15v, i d = 0.8a g fs -- 1.7 -- s diode forward voltage i s = 1.6a, v gs = 0v v sd -- -- 1.6 v dynamic b total gate charge v ds = 480v, i d = 2a, v gs = 10v q g -- 9.5 13 nc gate-source charge q gs -- 1.6 -- gate-drain charge q gd -- 4.0 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 320 -- pf output capacitance c oss -- 35 -- reverse transfer capacitance c rss -- 4.5 -- switching c turn-on delay time v gs = 10v, i d = 0.8a, v dd = 350v, r g = 4.7 t d(on) -- 18.4 -- ns turn-on rise time t r -- 35 -- turn-off delay time t d(off) -- 32 -- turn-off fall time t f -- 34 -- reverse recovery time v gs = 0v, i s = 1.3a, v dd = 25v di f /dt = 100a/us t fr -- 474.2 -- ns reverse recovery charge q fr -- 2067.8 -- uc reverse recovery current i rrm -- 5.16 -- a notes: 1. repetitive rating: pulse width limited by maximu m junction temperature 2. v dd = 50v, i as =2a, l=56mh, r g =25 3. pulse test: pulse width 300us, duty cycle 1.5% 4. essentially independent of operating temperature 5. for design reference only, not subject to produc tion testing. 6. switching time is essentially independent of ope rating temperature.
tsm2n70 700v n-channel power mosfet 3/10 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm2n70 700v n-channel power mosfet 4/10 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm2n70 700v n-channel power mosfet 5/10 version: b11 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm2n70 700v n-channel power mosfet 6/10 version: b11 diode reverse recovery time test circuit & waveform
tsm2n70 700v n-channel power mosfet 7/10 version: b11 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
tsm2n70 700v n-channel power mosfet 8/10 version: b11 to-251 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm2n70 700v n-channel power mosfet 9/10 version: b11 to-252 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm2n70 700v n-channel power mosfet 10/10 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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